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PDF EMB32N03P Data sheet ( Hoja de datos )
| Número de pieza | EMB32N03P | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
RDSON (MAX.)
30V
35mΩ
D
ID 5.5A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
385°C / W when mounted on a 1 in2 pad of 2 oz copper.
2014/3/20
EMB32N03P
LIMITS
±20
5.5
3.6
24
1.47
0.94
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
18
85
UNIT
°C / W
p.1
1 page  
EMB32N03P
10
Gate Charge Characteristics
I D = 5.5A
8
VD S = 5V
10V
6
15V
4
2
0
0
100
36
Q g ‐ Gate Charge( nC )
9
Maximum Safe Operating Area
12
10 R D S (O N ) Limit
100μs
1ms
10ms
1
100ms
1s
10s
DC
0.1
VG S = 10V
Single Pulse
R J A = 85°C/W
T A = 25°C
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
1000
900
800
700
600
500
400
300
200
100
0
0
50
40
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20
VD S ‐ Drain‐Source Voltage( V )
25
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J A = 85° C/W
TA = 25° C
30
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
Transient Thermal Response Curve
0.05
0.02
0.01
0.01
Single Pulse
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ J A =85°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
0.001
10‐4 10‐3 10‐2 10‐1 1 10 100
1000
t 1 ,Time (sec)
2014/3/20
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB32N03P.PDF ] | |
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