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Teilenummer | EMD16N08H |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
Logo | ||
Gesamt 6 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
12.8mΩ
ID 47A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=30A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3Pulsed drain current rating is package limited.
EMD16N08H
LIMITS
±30
47
27
150
30
45
22.5
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
2015/9/23
p.1
Outline Drawing
H
G
Dimension in mm
I
J K LD
E
F
B
C
M
A
Dimension A B C D E F G H I J K L M
Min.
4.80 5.50 5.90 0.3 0.85 0.15 3.67 0.41 3.00 0.94 0.45 0∘
Typ. 1.27
Max.
5.30 5.90 6.15 0.51 1.20 0.30 4.54 0.85 3.92 1.7 0.71 12∘
Recommended minimum pads
4,42
0,61
0,66
1,27
2015/9/23
EMD16N08H
p.6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ EMD16N08H Schematic.PDF ] |
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