|
|
Número de pieza | EMB12N10H | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB12N10H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
12mΩ
ID 50A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=21A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2017/2/22
EMB12N10H
LIMITS
±20
50
31
110
20
22
11
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
50
UNIT
°C / W
p.1
1 page EMB12N10H
Gate Charge Characteristics
10
I D = 12A
8
6
4
VD S = 25V
50V
2
0
0 10 20 30 40
Q g ‐ Gate Charge( nC )
4000
3000
Ciss
2000
Coss
1000
Crss
0
0
Capacitance Characteristics
f = 1MHz
VG S = 0 V
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
Maximum Safe Operating Area
103
102 RDS(ON) Limited
10μs
100μs
101
1ms
10ms
100
DC
TC=25°C
RθJC=2.5°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
1200
1000
800
600
400
200
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J C = 2.5° C/W
TC = 25° C
0.1 1 10 100
Single Pulse Time( mSEC )
1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1 10
t 1 ,Time (mSEC)
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 2.5°C/W
3.TJ ‐ TC = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
1000
2017/2/22
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMB12N10H.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB12N10A | Field Effect Transistor | Excelliance MOS |
EMB12N10CS | Field Effect Transistor | Excelliance MOS |
EMB12N10G | Field Effect Transistor | Excelliance MOS |
EMB12N10H | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |