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Teilenummer | EMB08N06H |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 6 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
8mΩ
ID 60A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB08N06H
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=60A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
60
35
170
60
180
90
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3Pulsed drain current rating is package limited.
2.5
°C / W
75
2015/7/15
p.1
Outline Drawing
H
G
Dimension in mm
I
J K LD
E
F
B
C
M
A
Dimension A B C D E F G H I J K L M
Min.
4.80 5.50 5.90 0.3 0.85 0.15 3.67 0.41 3.00 0.94 0.45 0∘
Typ. 1.27
Max.
5.30 5.90 6.15 0.51 1.20 0.30 4.54 0.85 3.92 1.7 0.71 12∘
Recommended minimum pads
4,42
0,61
0,66
1,27
2015/7/15
EMB08N06H
p.6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ EMB08N06H Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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