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PDF EMB05N03HR Data sheet ( Hoja de datos )
| Número de pieza | EMB05N03HR | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
5.0mΩ
ID 75A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB05N03HR
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
75
45
160
53
140
40
50
26
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=30A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2015/11/2
p.1
1 page  
G a te C h a rg e C h a ra c te ris tic s
12
ID = 3 0 A
10
8
6
4
V DS =5V
15V
10V
10 4
10 3
10 2
C a p a c ita n c e C h a ra c te ris tic s
EMB05N03HR
C is s
C o ss
C rss
2
0
0 10 20 30
Q g ,G a te C h a rg e ( n C )
f = 1 M H z
V GS= 0 V
10
0
5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
1000
M axim um Safe O perating A rea
100
R d s ( o n ) Lim it
10
1 0 μ s
100 μ s
1ms
D1C0100mms s
Single Pulse Maximum Power Dissipation
3000 RSθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1 VG S = 1 0 V
SIN G LE PU LSE
R θ J C = 2 .5 °C / W
T c = 2 5 °C
0.1
0 .1
1 10
V D S ,D r a in ‐S o u r c e V o lt a g e ( V )
100
1000
500
0
0.01
0.1 1 10 100
Single Pulse Time ( mSEC )
1000
1
Transient Therm al Response Curve
D uty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
S in g le P u ls e
0.01
1 0‐2
1 0‐1
N o tes:
DM
1 10
t 1 ,T im e ( m S E C )
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 ° C / W
3 .TJ ‐ T C = P * R θ J C (t )
4 .R θ J C (t )= r ( t ) * Rθ JC
100
1000
2015/11/2
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB05N03HR.PDF ] | |
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