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PDF EMB16N06V Data sheet ( Hoja de datos )
| Número de pieza | EMB16N06V | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
16mΩ
ID 15A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=15A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2015/7/13
EMB16N06V
LIMITS
±20
15
11
60
15
11.25
5.62
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page  
EMB16N06V
Gate Charge Characteristics
10
I D = 10A
8
VD S = 15V 30V
6
4
2
0
0
100
15 30 45
Q g ‐ Gate Charge( nC )
Maximum Safe Operating Area
60
10 R D S (O N ) Limit
100μs
1ms
10ms
100ms
1
1s
0.1
VG S = 10V
Single Pulse
R J A = 50°C/W
TA = 25°C
0.01
10s
DC
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
4000
3000
2000
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
1000
0
0
50
40
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J A = 50°C/W
TA = 25°C
30
40
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2015/7/13
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB16N06V.PDF ] | |
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