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Teilenummer | EMB32N03VAT |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 5 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
35mΩ
ID 5.5A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
G D D
PIN 1
SYMBOL
EMB32N03VAT
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=6A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
5.5
3.6
22
6
1.8
0.9
2.08
1.33
‐55 to 150
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
360°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/7/22
TYPICAL
MAXIMUM
12
60
UNIT
°C / W
p.1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMB32N03VAT Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
EMB32N03VAT | Field Effect Transistor | Excelliance MOS |
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