|
|
PDF EMF20N02VAT Data sheet ( Hoja de datos )
| Número de pieza | EMF20N02VAT | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMF20N02VAT (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
20mΩ
ID 7A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
GD D
PIN 1
SYMBOL
EMF20N02VAT
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
±12
7
5.5
28
2.08
1.33
‐55 to 150
V
A
W
°C
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
360°C / W when mounted on a 1 in2 pad of 2 oz copper.
12
°C / W
60
2015/8/31
p.1
1 page  
5
ID = 6A
4
3
Gate‐Charge Characteristics
VDS= 5V
10V
2
1
0
0 2 4 6 8 10 12 14
Qg, Gate Charge ( nC )
900
750
600
450
300
150
0
0
EMF20N02VAT
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
100
M aximum Safe Operating Area
10 R D S ( O N ) Limit
10μs
100μs
1ms
1
10ms
100ms
1s
DC
0.1
VG S = 1 0 V
Single Pulse
R J A = 6 0 ° C / W
T A = 2 5 ° C
0.01
0.1
1 10
VD S ‐ D r a in ‐ S o u r c e V o lt a g e ( V )
100
600
500
S in g le P u ls e M a x im u m P o w e r D is s ip a tio n
S in g le P u ls e
R θ J A = 6 0 ° C / W
T A = 2 5 ° C
400
300
200
100
0
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
t 1 , T i m e ( s e c )
0 .1
1
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐5
10‐4
10‐3
10 ‐2
10‐1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
1 10
100
2015/8/31
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMF20N02VAT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMF20N02VA | Field Effect Transistor | Excelliance MOS |
| EMF20N02VAT | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |