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PDF EMB14N10F Data sheet ( Hoja de datos )
| Número de pieza | EMB14N10F | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
14.6mΩ
ID 40A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=40A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2017/3/30
EMB14N10F
LIMITS
±20
40
25
140
40
80
40
40
16
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.1
62.5
UNIT
°C / W
p.1
1 page  
EMB14N10F
Gate Charge Characteristics
10
I D = 20A
8
VD S = 25V
50V
6
4
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
6000
4500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
3000
1500
0
0
Coss
Crss
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
103
Maximum Safe Operating Area
RDS(ON) Limited
102
101
10μs
100μs
1ms
10ms
DC
100
TC=25°C
RθJC=3.1°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
Transient Thermal Response Curve
Single Pulse Maximum Power Dissipation
600 Single Pulse
RTθC J= C = 2 35°. C1° C/W
500
400
300
200
100
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
100
D=0.5
0.2
10‐1 0.1
0.05
0.02
0.01
single pulse
10‐2
※Note :
1. RθJC(t)=3.1°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2017/3/30
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB14N10F.PDF ] | |
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