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Teilenummer | EMB09A3HP |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 9 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS 30V 30V
D2 / S1
RDSON (MAX.) 9.5mΩ 9.5mΩ
ID 15A 15A
D1
UIS, Rg 100% Tested
D1 D1 D1 PIN 1
(G1)
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB09A3HP
LIMITS
UNIT
Q1 Q2
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20 ±20
15 15
12 12
60 60
15 15
11.25
11.25
5.62
5.62
48 69
25 36
‐55 to 150
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
RJA when mounted on a 1 in2 pad of 2 oz copper.
TYPICAL
MAXIMUM
2.6 1.8
62 60
27 25
UNIT
°C / W
2013/11/21
p.1
G a te C h a rg e C h a ra c te ris tic s
12
ID= 1 0 A
10
8
VDS =5V
10V
6 15V
4
2
0
0
10 20
Q g ,G a te C h a rg e ( n C )
30
100
R D S (O N ) Limit
10
Maximum Safe Operating Area
100μs
1ms
10ms
100ms
1
0.1
VG S = 10V
Single Pulse
R J A = 62°C/W
TA = 25°C
1s
10s
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
EMB09A3HP
10 4
C A P A C IT A N C E C H A R A C T E R IS T IC S
10 3
C iss
10 2
C o ss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D R A IN ‐S O U R C E V L T A G E ( V )
30
Single Pulse Maximum Power Dissipation
100
Single Pulse
Rθ J A = 62°C/W
80 TA = 25°C
60
40
20
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A =62°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2013/11/21
p.6
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ EMB09A3HP Schematic.PDF ] |
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EMB09A3HP | Field Effect Transistor | Excelliance MOS |
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