|
|
Teilenummer | EMBE0A10G |
|
Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
Logo | ||
Gesamt 5 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
500mΩ
ID 1.5A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
VGS
ID
IDM
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
EMBE0A10G
LIMITS
±20
1.5
0.9
6
2
0.8
‐55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/30
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
| ||
Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMBE0A10G Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
EMBE0A10G | Field Effect Transistor | Excelliance MOS |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |