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Teilenummer | EMB30B03V |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 5 Seiten Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
35mΩ
ID ‐6.5A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/8/7
EMB30B03V
LIMITS
±20
‐6.5
‐4.9
‐26
2
1.08
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMB30B03V Schematic.PDF ] |
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