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PDF EMB08K04HP Data sheet ( Hoja de datos )
| Número de pieza | EMB08K04HP | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB08K04HP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS 40V 40V
D2 / S1
RDSON (MAX.) 17mΩ 8mΩ
ID 41A 57A
D1
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
D1 D1 D1 PIN 1
(G1)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB08K04HP
LIMITS
UNIT
Q1 Q2
Gate‐Source Voltage
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
Pulsed Drain Current1
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
PD
Tj, Tstg
±20 ±20
41 57
32 45
9 12
7 9.6
84 114
30 40
45 80
22.5
40
48 69
19 27
2.01
2.08
1.2 1.3
‐55 to 150
V
A
mJ
W
W
°C
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient3
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2.6 1.8
62 60 °C / W
27 25
2015/9/3
p.1
1 page  
Q1 TYPICAL CHARACTERISTICS
EMB08K04HP
On‐Region Characteristics
50
10V
7V
40
6V
30
5V
20
VG S = 4.5V
10
On‐Resistance Variation with Drain Current and Gate Voltage
3.0
2.5
2.0
VG S = 4.5V
1.5
1.0
5V
6V
7V
10V
0 0.5
01 2 3 45 6 7 8
0 10 20 30 40 50
V D S ,Drain‐Source Voltage( V )
I D ,Drain Current( A )
On‐Resistance Variation with Temperature
1.8
I D = 6A
V G S = 10V
1.6
1.4
On‐Resistance Variation with Gate‐Source Voltage
0.050
I D = 4A
0.040
0.030
1.2
1.0
0.8
0.020
0.010
TA = 125° C
TA = 25 °C
0.6 0
‐50 ‐25
0 25 50 75 100 125 150
2 4 6 8 10
Tj ,Junction Temperature(°C )
VG S ,Gate‐Source Voltage( V )
25
Transfer Characteristics
Body Diode Forward Voltage Variation
with Source Current and Temperature
60
V D S = 10V
20
T A = ‐55 °C
25 °C
10 VG S = 0V
15
125 °C
1
10
5
0.1
0.01
0.001
TA = 125°C
25°C
‐55°C
0
0
12
34
VG S ,Gate‐Source Voltage( V )
5
0.0001 0
0.2 0.4 0.6 0.8
1.0 1.2
VS D ,Body Diode Forward Voltage( V )
1.4
2015/9/3
p.5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet EMB08K04HP.PDF ] | |
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