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PDF EMB02K03HP Data sheet ( Hoja de datos )
| Número de pieza | EMB02K03HP | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB02K03HP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 5.5mΩ
30V
2.6mΩ
D2 / S1
ID 50A 83A
D1
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
D1 D1 D1 PIN 1
(G1)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3Package limitation current, Q1=25A, Q2=36A
RJA when mounted on a 1 in2 pad of 2 oz copper.
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
EMB02K03HP
LIMITS
Q1 Q2
±20 ±20
50 83
31 52
90 150
30 63
45 198
22 99
48 100
19 40
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.6 1.25
62 55
27 24
UNIT
°C / W
2016/4/11
p.1
1 page  
Q1 TYPICAL CHARACTERISTICS
100 On‐Region Characteristics
VG S = 10V
7V
80
6V
5V
4.5V
60
40
20
0
0 0.5 1 1.5
2 2.5
3 3.5
4 4.5
5
VD S ,Drain‐Source Voltage( V )
On‐Resistance Variation with Temperature
1.8
I D = 16A
1.6 V G S = 10V
1.4
1.2
1.0
0.8
0.6
‐50 ‐25
0 25 50 75 100 125 150
Tj ,Junction Temperature(°C )
Transfer Characteristics
50
V D S = 10V
40
T A = ‐55 °C
25 °C
125 °C
30
20
10
0
012
3 45
VG S ,Gate‐Source Voltage( V )
2016/4/11
EMB02K03HP
On‐Resistance Variation with Drain Current and Gate Voltage
1.8
1.6
1.4
VG S = 4.5V
5V
1.2
6V
7V
1.0 10V
0.8
0 20 40 60
I D ,Drain Current( A )
80
100
0.025
0.020
0.015
0.010
0.005
0
2
On‐Resistance Variation with Gate‐Source Voltage
ID = 10A
TA = 125° C
TA = 25° C
468
VG S ,Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
10 VG S = 0V
1
0.1 T A = 125°C 25°C
0.01
‐55°C
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2
VS D ‐ Body Diode Forward Voltage( V )
1.4
p.5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet EMB02K03HP.PDF ] | |
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