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PDF EMF30C02G Data sheet ( Hoja de datos )
| Número de pieza | EMF30C02G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
20V ‐20V
30.5mΩ 100mΩ
ID
6.5A
‐4.2A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/26
ID
IDM
PD
Tj, Tstg
TYPICAL
EMF30C02G
LIMITS
N‐CH
P‐CH
±12 ±12
6.5 ‐4.2
4.5 ‐3.3
26 ‐16.8
2
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
N‐Channel
On‐Region Characteristics
25 VGS = 10V
5.0V
20
15
4.5V
2.5V
10
5
0
0 0.5 1 1.5 2 2.5
VDS, Drain‐Source Voltage( V )
1.5 On‐Resistance Variation with Temperature
ID= 6.5A
1.4 VGS= 4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0 25 50 75 100 125
TJ, Junction Temperature(°C)
Transfer Characteristics
20
VDS= 5V
TA= -55°C
25°C
16
125°C
12
8
2
0
0.5 1
1.5 2
2.5
VGS, Gate‐Source Voltage( V )
3
150
3
2012/12/26
EMF30C02G
On‐Resistance Variation with
Drain Current and Gate Voltage
2.0
1.8
1.6
VGS = 2.5V
1.4 3.0V
1.2 3.5V 4.0V
1.0 4.5V
0.8
0 5 10 15 20 25
ID, Drain Current( A )
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
I D = 3A
T A = 125°C
246
VG S ‐ Gate‐Source Voltage( V )
T A = 25°C
8 10
Body Diode Forward Voltage Variation with
Source Current and Temperature
100
VGS= 0V
10
1
TJ= 125°C 25°C
-55°C
0.1
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8
VSD, Body Diode Forward Voltage( V )
1
1.2
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMF30C02G.PDF ] | |
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