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Número de pieza | EMBB5B10G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBB5B10G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐100V
RDSON (MAX.)
250mΩ
ID ‐2.5A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/9/21
EMBB5B10G
LIMITS
±20
‐2.5
‐1.8
‐10
2
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page EMBB5B10G
10
I D = ‐ 1.5A
Gate Charge Characteristics
8
V D S = ‐ 50V ‐ 80V
6
4
2
0
0 10 20 30
Q g ‐ Gate Charge(nC)
40
Capacitance Characteristics
3000
2700
f = 1MHz
V G S = 0 V
2400
2100
Ciss
1800
1500
1200
900
600
300
0
0
Coss
Crss
10
20 30 40 50
‐VD S ‐ Drain‐Source Voltage( V )
60
Maximum Safe Operating Area
100
10
R D S ( O N )Limit
1
0.1
VG S = ‐10V
Single Pulse
R JA = 125°C/W
TA = 25°C
0.010.1
1
1001u0SuS
1mS
10mS
DC100mS
10 100
‐VD S ‐ Drain‐Source Voltage( V )
1000
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2012/9/21
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBB5B10G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBB5B10G | Field Effect Transistor | Excelliance MOS |
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