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What is EMF09P02V?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMF09P02V Datasheet PDF - Excelliance MOS

Part Number EMF09P02V
Description Field Effect Transistor
Manufacturers Excelliance MOS　
Logo Excelliance MOS Logo　


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Total 5 Pages



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No Preview Available ! EMF09P02V datasheet, circuit

 
 
P‐Channel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
‐20V 
D
RDSON (MAX.) 
9.5mΩ 
ID 
‐20A 
G
 
 S
Pb‐Free Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
Gate‐Source Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=‐15A, RG=25Ω
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
Junction‐to‐Case 
RJC 
Junction‐to‐Ambient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1％ 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
2012/06/19 
EMF09P02V
LIMITS 
±8 
‐20 
‐15 
‐80 
‐15 
11.25 
5.6 
2.5 
1.25 
‐55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
6 
50 
UNIT 
°C / W 
p.1 

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EMF09P02V equivalent
 
 
EMF09P02V
 
 
 
Gate Threshold Voltage v.s. Junction Temperature
  1.50
  1.25
 
1.00
 
  0.75
  0.50
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 50°C/W
40 TA  = 25°C
30
20
  0.25
10
 
0
0
 
‐50
0 50
100 150
TJ   ‐ Junction Temperature (°C)
0.001
0.01 0.1
1
10 100 1000
 
Maximum Safe Operating Area
  100
  R D S  (O  N  ) Limit
  10
100μs
1ms
10ms
100ms
  1s
1
 
10s
DC
 
0.1
VG  S = ‐4.5V
Single Pulse
  R  J  A = 50°C/W
TA   = 25°C
  0.01
0.1 1 10 100
  ‐VD  S  ‐ Drain‐Source Voltage( V )
  Transient Thermal Response Curve
 
 1
  Duty Cycle = 0.5
  0.2
  0.1
0.1
 
0.05
  Single Pulse
0.02
  0.01
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ  J A  =50°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
  0.01
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
10
100 1000
  t1  ,Time ( SEC )
 
 
 
2012/06/19 
p.5 


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