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Número de pieza | EMF60P02J | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMF60P02J (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
60mΩ
ID ‐4A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
‐4
‐2.8
‐16
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1.25
0.8
‐55 to 150
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
Junction‐to‐Ambient3
RJA
Junction‐to‐Lead4
RJL
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3100°C / W when mounted on a 1 in2 pad of 2 oz copper.
4 RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient.
100
55
EMF60P02J
UNIT
V
A
W
°C
UNIT
°C / W
2014/1/7
p.1
1 page Ordering & Marking Information:
Device Name: EMF60P02J for SOT‐23
25: Device Code, 25 for EMF60P02J
ABC: Date Code
Outline Drawing
b
e
e1
D
Dimension in mm
C
A1
Dimension A A1 A2 b C D E E1 e e1 F G L1
Min.
0.7 0
0.35 0.1 2.8 2.6 1.5 0.9 0.8 0.3 0.55
Typ. 2.9 2.8 1.6 0.95 1.9
Max.
1.12 0.1 0.5 0.2 3 3 1.7 1
Footprint
1.2 0.6 0.65
2014/1/7
EMF60P02J
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMF60P02J.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMF60P02J | Field Effect Transistor | Excelliance MOS |
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