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Teilenummer | EMD07P03A |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 5 Seiten P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
8mΩ
ID
‐70A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD07P03A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐50A, RG=25Ω
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
±25
‐70
‐50
‐150
‐50
125
62.5
25
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐40A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/4/19
2
°C / W
50
p.1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMD07P03A Schematic.PDF ] |
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