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PDF EMB16P04A Data sheet ( Hoja de datos )
| Número de pieza | EMB16P04A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐40V
D
RDSON (MAX.)
16mΩ
ID
‐25A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐25A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/12/05
EMB16P04A
LIMITS
±20
‐25
‐18
‐100
‐25
31.25
15
50
17
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
p.1
1 page  
EMB16P04A
10
I D = ‐ 25A
8
Gate Charge Characteristics
6
VD S = ‐ 20V
4
2
0
0 15 30 45
Q g ‐ Gate Charge( nC )
60
5000
4000
3000
2000
1000
0
0
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
Coss
Crss
10 20
‐ VD S , Drain‐Source Voltage( V )
30
40
MAXIMUM SAFE OPERATING AREA
300
100 R d s (o n ) Limit
10
10μ s
100μ s
1ms
10ms
D10C0ms
1
0.5
0.5
VG S = ‐10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
1 10
‐VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
1
Duty Cycle = 0.5
Effective Transient Thermal Impedance
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
t1 , Pulse Width(ms)
0.01
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ JC = 2.5° C/W
40 TC = 25° C
30
20
10
0
0.001
0.01 0.1 1
t 1 ,Time ( sec )
10 100
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ J C =2.5° C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
0.1 1
2012/12/05
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB16P04A.PDF ] | |
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