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PDF EMB40P06A Data sheet ( Hoja de datos )
| Número de pieza | EMB40P06A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐60V
D
RDSON (MAX.)
62mΩ
ID
‐17A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐12A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/6/13
EMB40P06A
LIMITS
±20
‐17
‐11
‐60
‐12
7.2
3.6
27
8
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.5
85
UNIT
°C / W
p.1
1 page  
EMB40P06A
10
I D = ‐ 12A
8
6
Gate Charge Characteristics
V D S = ‐ 15V
‐ 30V
4
2
0
0 10 20 30
Q g ‐ Gate Charge( nC )
40
2500
2000
1500
Ciss
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
1000
500
Coss
0 Crss
0
15 30
45
‐ VD S , Drain‐Source Voltage( V )
60
Maximum Safe Operating Area
80
R D S ( O N ) Limit
100μs
1ms
10
VG S = ‐10V
Single Pulse
R J C = 4.5°C/W
1 TC = 25°C
10ms
100ms
1s
10s
DC
0
1 10
‐VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
Effective Transient Thermal Impedance
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 4.5°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01 0.1
t 1 ,Time (sec)
1
10 100
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
t 1 , Pulse Width(s)
0.01
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ J C =4.5°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
0.1 1
2013/6/13
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB40P06A.PDF ] | |
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