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Teilenummer | EMB39P06CS |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 5 Seiten P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐60V
D
RDSON (MAX.)
41mΩ
ID
‐26A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐20A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RθJC
Junction‐to‐Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
2013/5/21
EMB39P06CS
LIMITS
±20
‐26
‐18
‐60
‐20
20
10
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
50
UNIT
°C / W
p.1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMB39P06CS Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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