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PDF EMB09A03HP Data sheet ( Hoja de datos )
| Número de pieza | EMB09A03HP | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB09A03HP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS 30V 30V
D2 / S1
RDSON (MAX.) 9.5mΩ 9.5mΩ
ID 15A 15A
D1
UIS, Rg 100% Tested
D1 D1 D1 PIN 1
(G1)
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB09A3HP
LIMITS
UNIT
Q1 Q2
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20 ±20
15 15
12 12
60 60
15 15
11.25
11.25
5.62
5.62
48 69
25 36
‐55 to 150
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
RJA when mounted on a 1 in2 pad of 2 oz copper.
TYPICAL
MAXIMUM
2.6 1.8
62 60
27 25
UNIT
°C / W
2013/11/21
p.1
1 page  
Q1 TYPICAL CHARACTERISTICS
On‐Region Characteristics
50
10V 7V
6V
5V
40
30
VG S = 4.5V
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VD S ,Drain‐Source Voltage( V )
On‐Resistance Variation with Temperature
1.8
I D = 10A
VG S = 10V
1.6
1.4
1.2
1.0
0.8
0.6
‐50 ‐25
0 25 50 75 100 125 150
Tj ,Junction Temperature(°C )
Transfer Characteristics
25
V D S = 10V
20
T A = ‐55 °C
25 °C
15
125 °C
10
5
0
012
3 45
VG S ,Gate‐Source Voltage( V )
EMB09A3HP
On‐Resistance Variation with Drain Current and Gate Voltage
3
2.5
2
1.5
1
0.5
0
VG S = 4.5V
5V
5.5V
6V
7V
10V
10 20 30 40
I D ,Drain Current( A )
50
On‐Resistance Variation with Gate‐Source Voltage
0.030
0.025
I D = 5A
0.020
0.015
0.010
0
2
TA = 125 °C
TA = 25° C
468
VG S ,Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
60
VG S = 0V
10 TA = 125°C
1
0.1
0.01
0.001
25°C
‐55°C
0.00010
0.2 0.4 0.6 0.8
1.0
VS D ,Body Diode Forward Voltage( V )
1.2
1.4
2013/11/21
p.5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet EMB09A03HP.PDF ] | |
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