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Teilenummer | EMB25A06S |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 5 Seiten Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
30mΩ
ID 7A
UIS, 100% Tested
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
Avalanche Current
IAS
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
EAS
EAR
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=7A, Rated VDS=60V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
EMB25A06S
LIMITS
±20
7
5
28
12
7.2
3.6
5
2
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
2012/7/24
p.1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMB25A06S Schematic.PDF ] |
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