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Teilenummer | EMF20A02V |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 5 Seiten Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
20mΩ
ID 6A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMF20A02V
LIMITS
UNIT
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
ID
IDM
Avalanche Current
IAS
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
EAS
EAR
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
100% UIS testing in condition of VD=10V, L=0.1mH, VG=4.5V, IL=6A, Rated VDS=20V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
±12
6
4
24
10
5
2.5
2
0.8
‐55 to 150
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
25
62.5
°C / W
2013/1/11
p.1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMF20A02V Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
EMF20A02G | Field Effect Transistor | Excelliance MOS |
EMF20A02V | Field Effect Transistor | Excelliance MOS |
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