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PDF EMB17A03H Data sheet ( Hoja de datos )
| Número de pieza | EMB17A03H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
17mΩ
ID 16A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB17A03H
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
16
10
64
Avalanche Current
IAS 16
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
EAS
EAR
5
2.5
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
25
10
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=10A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
5
62.5
°C / W
2012/8/15
p.1
1 page  
EMB17A03H
Gate Charge Characteristics
10
I D = 16A
8
6
VD S = 5V
10V
15V
4
2
0
0
4 8 12
Q g ‐ Gate Charge( nC )
16
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20 25
VD S ‐ Drain‐Source Voltage( V )
30
1000
M A X IM U M S A F E O P E R A T IN G A R E A
100
R
d s
(o
n
)
L
i
m
i
t
10
D
10
C
10m
0ms
1
s
m
1
s
0
0
1
μs
0
μ s
1 V G S = 1 0 V
S IN G LE P U LS E
R θ J C = 5 ° C / W
T c = 2 5° C
0 .1
0 .1
1
10 100
V D S , D R A I N ‐ S O U R C E V O L T A G E ( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 62.5°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =62.5°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/8/15
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB17A03H.PDF ] | |
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