|
|
Número de pieza | EMB55A03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB55A03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
55mΩ
ID 4.5A
UIS, 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=4.5A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB55A03G
LIMITS
±20
4.5
3.3
18
4.5
1
0.5
2
1.3
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/30
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page 10
Gate‐Charge Characteristics
ID = 4.5A
8
VDS= 5V
15V
6
4
10V
2
0
01 23456
Qg, Gate Charge( nC )
100
Maximum Safe Operating Area
10 R D S ( O N ) Limit
100μs
1ms
1
10ms
100ms
1s
10s
VG S = 10V
0.1 Single Pulse
DC
R J A = 125°C/W
T A = 25°C
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Transient Thermal Response Curve
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
500
400
300
200
100
0
0
EMB55A03G
Capacitance Characteristics
f = 1MHz
V =GS 0V
C iss
Coss
Crss
5 10 15 20 25
VDS,Drain‐Source Voltage( V )
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2013/8/30
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB55A03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB55A03G | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |