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Número de pieza | EMB70N08V | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB70N08V (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
65mΩ
ID
UIS, 100% Tested
6A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=7A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB70N08V
LIMITS
±20
6
4.5
24
7
2.45
1.23
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/7/24
TYPICAL
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page EMB70N08V
Gate Charge Characteristics
10
I D = 6A
8
6
V D S = 20V 40V
4
1500
1350
Capacitance Characteristics
f = 1MHz
V G S = 0 V
1200
Ciss
1050
900
750
600
2
0
0 3 6 9 12 15 18 21
Q g ‐ Gate Charge( nC )
450
300
150
0
0
Coss
Crss
10
20 30 40 50
VD S ‐ Drain‐Source Voltage( V )
60
100
Maximum Safe Operating Area
10 R D S ( O N ) Limit
100μs
1ms
1
0.1
VG S = 10V
Single Pulse
R JA = 60°C/W
TA = 25°C
10ms
100ms
1s
DC
0.01
0.1 1 10
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 60°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
0.2
Transient Thermal Response Curve
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A =60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
10
100 1000
t 1 ,Time (sec)
2013/7/24
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB70N08V.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB70N08A | Field Effect Transistor | Excelliance MOS |
EMB70N08C | Field Effect Transistor | Excelliance MOS |
EMB70N08CS | Field Effect Transistor | Excelliance MOS |
EMB70N08G | Field Effect Transistor | Excelliance MOS |
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