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Teilenummer | EMB06N03HR |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 6 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
6mΩ
ID 75A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
45
160
Avalanche Current
IAS 53
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=53A, RG=25Ω
L = 0.05mH
EAS
EAR
140
40
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
50
26
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2012/3/26
p.1
Outline Drawing
H
G
Dimension in mm
I
J K LD
E
F
B
C
M
A
Dimension A B C D E F G H I J K L M
Min.
4.80 5.50 5.90 0.3 0.85 0.15 3.67 0.41 3.00 0.94 0.45 0∘
Typ. 1.27
Max.
5.30 5.90 6.15 0.51 1.20 0.30 4.54 0.85 3.92 1.7 0.71 12∘
Recommended minimum pads
4,42
0,61
0,66
1,27
2012/3/26
EMB06N03HR
p.6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ EMB06N03HR Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
EMB06N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
EMB06N03HR | Field Effect Transistor | Excelliance MOS |
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