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PDF EMB09N03HR Data sheet ( Hoja de datos )
| Número de pieza | EMB09N03HR | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
9.5mΩ
ID 50A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB09N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
50
35
140
Avalanche Current
IAS 37.5
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=37.5A, RG=25Ω
L = 0.05mH
EAS
EAR
70
15
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
50
26
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2012/3/26
p.1
1 page  
EMB09N03HR
G a te C h a rg e C h a ra c te ris tic s
12
ID = 2 5 A
10
8
V DS =5V
10V
6
15V
4
2
0
0 10 20 30
Q g ,G a te C h a rg e ( n C )
10 4
C A P A C IT A N C E C H A R A C T E R IS T IC S
10 3
C iss
10 2
C o ss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D R A IN ‐S O U R C E V L T A G E ( V )
30
300
200
100 R d s ( o n ) Limit
50
20
10
5
MAXIMUM SAFE OPERATING AREA
10μ s
100μ s
1ms
1D01C00mmss
2
1
VG S = 10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25° C
0.5
0.5 1
10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SINGLE PULSE
Rθ J C = 2.5° C/W
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
Duty Cycle = 0.5
0.5
Transient Thermal Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1 10
t 1 ,Time ( mSEC )
1.Duty Cycle,D =
t1
t2
2.Rθ J C =2.5°C/W
3.TJ ‐ TC = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
1000
2012/3/26
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB09N03HR.PDF ] | |
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