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PDF EMB22N04G Data sheet ( Hoja de datos )
| Número de pieza | EMB22N04G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
22mΩ
ID 9A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/6/5
EMB22N04G
LIMITS
±20
9
8
36
2.5
1.6
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
10
I D = 9A
8
6
Gate Charge Characteristics
VD S = 15V 20V
4
2
0
0
5 10 15
Q g ‐ Gate Charge( nC )
20
100
Maximum Safe Operating Area
R D S ( O N ) Limit
10
100μs
1ms
10ms
1
0.1
VG S = 10V
Single Pulse
R J A = 125°C/W
T A = 25°C
100ms
1s
10s
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Transient Thermal Response Curve
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2012/6/5
EMB22N04G
800 Capacitance Characteristics
f = 1MHz
VG S = 0 V
600 Ciss
400
200
0
0
50
40
30
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J A = 125°C/W
TA = 25°C
40
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB22N04G.PDF ] | |
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