(PDF) EMF24N02Q Datasheet - Field Effect Transistor

Número de pieza	EMF24N02Q
Descripción	Field Effect Transistor
Fabricantes	Excelliance MOS
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No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 24mΩ ID 6A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL VGS ID IDM PD Tj, Tstg TYPICAL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 2012/5/22 EMF24N02Q LIMITS ±12 6 4 24 6.25 2.5 ‐55 to 150 UNIT V A W °C MAXIMUM 20 100 UNIT °C / W p.1 1 page Ordering & Marking Information: Device Name: EMF24N02Q for SOT‐223 EMF24N02: Device Name ABCDEFG: Date Code Outline Drawing Dimension in mm Dimension A C D E I H B J 1 2 3 4 5 Min. 6.70 2.90 0.02 0∘ 0.60 0.25 6.30 63.0 3.30 3.30 1.40 Typ. 13∘ 2.30 Max. 7.30 3.10 0.10 10∘ 0.80 0.35 6.70 6.70 3.70 3.70 1.80 Footprint 2012/5/22 EMF24N02Q p.5 5 Page

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PDF EMF24N02Q Data sheet ( Hoja de datos )