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Número de pieza | EMBA1N10Q | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBA1N10Q (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
110mΩ
ID 4.5A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=5A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/10/8
EMBA1N10Q
LIMITS
±20
4.5
3
18
5
1.25
0.625
6.25
2.5
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
20
150
UNIT
°C / W
p.1
1 page EMBA1N10Q
Gate Charge Characteristics
10
I D = 4.5A
8
6
VD S = 50V 80V
4
2
0
0
5 10 15
Q g ‐ Gate Charge( nC )
100
Maximum Safe Operating Area
10 R D S ( O N )Limit
1
10uS
100uS
1mS
D1C0100mmSS
0.1
VG S = 10V
Single Pulse
R JA = 150°C/W
TA = 25°C
0.01
0.1 1 10 100
VD S ‐ Drain‐Source Voltage( V )
20
1000
1000
900
800
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
700
600 Ciss
500
400
300
200 Coss
100
Crss
0
0
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 150°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A = 150°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/10/8
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBA1N10Q.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBA1N10A | Field Effect Transistor | Excelliance MOS |
EMBA1N10Q | Field Effect Transistor | Excelliance MOS |
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