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PDF EMBJ0N25Q Data sheet ( Hoja de datos )
| Número de pieza | EMBJ0N25Q | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
D
RDSON (MAX.)
1Ω
ID 1.1A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/8/15
EMBJ0N25Q
LIMITS
±20
1.1
0.7
4.4
6.25
2.5
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
20
150
UNIT
°C / W
p.1
1 page  
EMBJ0N25Q
10
Gate Charge Characteristics
I D = 0.55A
8
6
VD S = 100V 200V
4
2
0
0
10 20 30
Q g ‐ Gate Charge( nC )
40
10
Maximum Safe Operating Area
R D S (O N )Limit
1
0.1
100μs
1ms
10ms
100ms
1s
DC
1500
1350
1200 Ciss
Capacitance Characteristics
f = 1M H z
V G S = 0 V
1050
900
750
600
450
300
Coss
150
0 Crss
0 20
40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 150°C/W
TA = 25°C
40
30
20
VG S = 10V
Single Pulse
R JA = 150°C/W
0.01 TA = 25°C
1 10 100 1000
VD S ‐ Drain‐Source Voltage( V )
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 150°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/8/15
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMBJ0N25Q.PDF ] | |
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