(PDF) EMBB0N10J Datasheet - Field Effect Transistor

Número de pieza	EMBB0N10J
Descripción	Field Effect Transistor
Fabricantes	Excelliance MOS
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No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 220mΩ ID 1.4A G UIS 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMBB0N10J LIMITS ±20 1.4 0.85 5.6 1.25 0.8 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐ Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 2013/8/30 TYPICAL MAXIMUM 100 UNIT °C / W p.1 1 page Ordering & Marking Information: Device Name: EMBB0N10J for SOT‐23 1C: Device Code, 1C for EMBB0N10J ABC: Date Code Outline Drawing b e e1 D Dimension in mm C A1 Dimension A A1 A2 b C D E E1 e e1 F G L1 Min. 0.7 0 0.35 0.1 2.8 2.6 1.5 0.9 0.8 0.3 0.55 Typ. 2.9 2.8 1.6 0.95 1.9 Max. 1.12 0.1 0.5 0.2 3 3 1.7 1 1.2 0.6 0.65 Footprint 2013/8/30 EMBB0N10J p.5 5 Page

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PDF EMBB0N10J Data sheet ( Hoja de datos )