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PDF EMB21N03P Data sheet ( Hoja de datos )
| Número de pieza | EMB21N03P | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
RDSON (MAX.)
30V
21mΩ
D
ID 6A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
385°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/4/26
EMB21N03P
LIMITS
±20
6
4.5
24
1.47
0.94
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
18
85
UNIT
°C / W
p.1
1 page  
EMB21N03P
10
I D = 6A
8
6
Gate Charge Characteristics
VD S = 5V
10V
15V
4
2
0
0
4 8 12
Q g ‐ Gate Charge( nC )
16
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20 25
VD S ‐ Drain‐Source Voltage( V )
30
100
Maximum Safe Operating Area
10 R D S ( O N ) Limit
100μs
1ms
10ms
1
100ms
0.1
VG S = 10V
Single Pulse
R J A = 85°C/W
T A = 25°C
1s
10s
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 85° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =85° C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
t 1 ,Time (sec)
2012/4/26
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB21N03P.PDF ] | |
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