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Número de pieza | EMD50N15E | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD50N15E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
150V
D
RDSON (MAX.)
50mΩ
ID 48A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain‐Source Voltage
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.2mH, ID=18A, RG=25Ω
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDSS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/18
EMD50N15E
LIMITS
150
±30
48
30
140
18
32.4
16.2
104
41
‐55 to 150
UNIT
V
V
A
mJ
W
°C
MAXIMUM
1.2
62.5
UNIT
°C / W
p.1
1 page 10
ID = 20A
8
Gate Charge Characteristics
EMD50N15E
6000
4500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
6
4
2
VD S = 50V
80V
3000
1500
Coss
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
Crss
0
0 10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
Maximum Safe Operating Area
103
Single Pulse Maximum Power Dissipation
3000 Single Pulse
Rθ JC = 1.2° C/W
TC = 25° C
2500
102
RDS(ON) Limited
10μs
100μs
1ms
101
10ms
DC
100
TC=25°C
RθJC=1.2°C/W
Vgs=10V
Single Pulse
10‐1
100 101
VDS, Drain‐Source Voltage( V )
102
Transient Thermal Response Curve
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=1.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/12/18
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMD50N15E.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD50N15A | Field Effect Transistor | Excelliance MOS |
EMD50N15E | Field Effect Transistor | Excelliance MOS |
EMD50N15F | Field Effect Transistor | Excelliance MOS |
EMD50N15G | Field Effect Transistor | Excelliance MOS |
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