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Número de pieza | EMD14N50F | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD14N50F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.)
0.6Ω
ID 14A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=14A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/20
EMD14N50F
LIMITS
±30
14
7.6
56
14
294
49
48
19
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.6
60
UNIT
°C / W
p.1
1 page G a te C h a rg e C h a ra c te ris tic s
18
ID = 7 A
15
12
9
6
V DS =125V
250V
3
0
0 5 10 15 20 25 30 35
Q g ,G a te C h a rg e ( n C )
100
Maximum Safe Operating Area
10 R D S ( O N ) Limit
100μs
1ms
10ms
1
0.1
VG S = 10V
Single Pulse
R J A = 60°C/W
TA = 25°C
0.01
1
100ms
1s
10s
DC
10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Duty Cycle = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2013/12/20
EMD14N50F
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10
Capacitance Characteristics
Ciss
f = 1MHz
V G S = 0 V
Coss
Crss
20 30 40 50 60
VD S ‐ Drain‐Source Voltage( V )
70
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD14N50F.PDF ] |
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