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Número de pieza | EMD06N60F | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD06N60F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
1.55Ω
ID 6A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=6A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/20
EMD06N60F
LIMITS
±30
6
3.7
24
6
54
9
48
19
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.6
60
UNIT
°C / W
p.1
1 page G a te C h a rg e C h a ra c te ris tic s
18
ID = 3 A
15
12
9
6
3
V DS =150V
300V
0
0 3 6 9 12 15 18 21
Q g ,G a te C h a rg e ( n C )
Maximum Safe Operating Area
100
R D S ( O N ) Limit
10
100μs
1
0.1
VG S = 10V
Single Pulse
R J A = 60°C/W
TA = 25°C
1ms
10ms
100ms
1s
10s
DC
0.01
1
10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2013/12/20
EMD06N60F
10 3
10 2
C a p a c ita n c e C h a ra c te ris tic s
C is s
C o ss
10
f = 1 M H z
V GS= 0 V
C rss
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD06N60F.PDF ] |
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