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EMB70N08C Schematic ( PDF Datasheet ) - Excelliance MOS

Teilenummer EMB70N08C
Beschreibung Field Effect Transistor
Hersteller Excelliance MOS
Logo Excelliance MOS Logo 




Gesamt 5 Seiten
EMB70N08C Datasheet, Funktion
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
65mΩ
ID 15A G
UIS, 100% Tested
Pb-Free Lead Plating & Halogen Free
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=23A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient3
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
EMB70N08C
LIMITS
±20
15
10
60
23
27
13
39
15
-55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.2
50
UNIT
°C / W
2013/7/22
p.1





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