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Teilenummer | EMB70N08C |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 5 Seiten N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
65mΩ
ID 15A G
UIS, 100% Tested
Pb-Free Lead Plating & Halogen Free
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=23A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient3
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
EMB70N08C
LIMITS
±20
15
10
60
23
27
13
39
15
-55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.2
50
UNIT
°C / W
2013/7/22
p.1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ EMB70N08C Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
EMB70N08A | Field Effect Transistor | Excelliance MOS |
EMB70N08C | Field Effect Transistor | Excelliance MOS |
EMB70N08CS | Field Effect Transistor | Excelliance MOS |
EMB70N08G | Field Effect Transistor | Excelliance MOS |
EMB70N08V | Field Effect Transistor | Excelliance MOS |
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