|
|
Número de pieza | EMDE0N20CS | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMDE0N20CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
0.5Ω
ID
UIS, 100% Tested
5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 1mH, ID=1.5A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/2/2
EMDE0N20CS
LIMITS
±30
5
3.3
20
1.5
1.12
0.56
29
11
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.2
62.5
UNIT
°C / W
p.1
1 page 10
Gate Charge Characteristics
I D = 2.5A
8
6
VD S = 50V
100V
4
2
0
05
10 15 20 25
Q g ‐ Gate Charge( nC )
EMDE0N20CS
1200
900
Ciss
600
Capacitance Characteristics
f = 1MHz
VG S = 0 V
300
Coss
Crss
0
0
50 100 150
VD S ‐ Drain‐Source Voltage( V )
200
100
Maximum Safe Operating Area
10 R D S (O N )Limit
100μs
1ms
10ms
1
100ms
1s
DC
VG S = 10V
Single Pulse
R JC = 4.2°C/W
0.1 TC = 25°C
1 10
100 1000
VD S ‐ Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C= 4.2°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
※Note :
1. RθJC(t)=4.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.02
0.01
single pulse
10‐2
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2012/2/2
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMDE0N20CS.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMDE0N20C | Field Effect Transistor | Excelliance MOS |
EMDE0N20CS | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |