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PDF EMF65N15A Data sheet ( Hoja de datos )
| Número de pieza | EMF65N15A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
150V
D
RDSON (MAX.)
65mΩ
ID 20A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=20A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/6/12
EMF65N15A
LIMITS
±16
20
15
80
20
20
10
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
100
UNIT
°C / W
p.1
1 page  
60
Power Derating Curve
EMF65N15A
Power Derating Curve
2
48
36
24
12
0
0
50
100 150
200
TC ‐ Case Temperature(°C)
Body Diode Forward Voltage Variation with
100 Source Current and Temperature
V G S = 0V
10
T A = 125° C
1.75
1.5
1.25
1
0.75
0.5
0.25
0
0
1000
50 100 150
TA ‐ Ambient Temperature(°C)
M a xim u m S a fe O p e ra th in g A re a
200
1
0.1
25° C
‐55° C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D ‐ Body Diode Forward Voltage(V)
100
R D S(on ) Lim ited
10us
100us
10
1m s
TC=25° C
R θ JC=2 .5 ° C /W
S in g le P u lse
1
1 10
10m s
100
V DS, D ra in -S o u rce V o lta g e ( V )
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
※Note :
1. RθJC(t)=2.5° C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.02
0.01
10‐2
single pulse
PDM
t 1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2012/6/12
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMF65N15A.PDF ] | |
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