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Teilenummer | EMB03N03A |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
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Gesamt 6 Seiten N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
3.5mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB03N03A
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
80
50
170
Avalanche Current
IAS 53
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=53A, RG=25Ω
L = 0.05mH
EAS
EAR
140
40
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
70
28
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
1.8
°C / W
75
2011/12/16
p.1
Outline Drawing
E
E2
B2
P
B1
B
A
C
L3
A1
EMB03N03A
Dimension A A1 B B1 B2 C
D D2 D3 E E2 H
L L1 L2 L3 P
Min.
2.10 0.95 0.30 0.40 0.60 0.40 5.30 6.70 2.20 6.40 4.80 9.20 0.89 0.90 0.50 0.00 2.10
Max.
2.50 1.30 0.85 0.94 1.00 0.60 6.20 7.30 3.00 6.70 5.45 10.15 1.70 1.65 1.10 0.30 2.50
Footprint
7.00
2.3 2.3
1.50
2011/12/16
p.6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ EMB03N03A Schematic.PDF ] |
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