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PDF EMB07N04A Data sheet ( Hoja de datos )
| Número de pieza | EMB07N04A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
7mΩ
ID 55A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=30A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2010/12/16
EMB07N04A
LIMITS
±20
55
40
150
30
45
22.5
41
16
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3
75
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = 24A
8
6
VD S = 15V
20V
4
2400
1800
1200
EMB07N04A
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
60
600
0
0
Coss
Crss
10 20
VD S ‐ Drain‐Source Voltage( V )
30
40
300
MAXIMUM SAFE OPERATING AREA
200
100
R d s (o n ) Limit
10μ s
50
100μ s
20
10
5
1ms
D10C100mmss
2
1
VG S = 10V
SINGLE PULSE
Rθ J C = 3° C/W
Tc = 25° C
0.5
0.5 1
10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time ( sec )
1
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 3° C/W
40 TC = 25° C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time (sec)
100 1000
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J C =3°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
1000
2010/12/16
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB07N04A.PDF ] | |
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