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PDF EMB12N04A Data sheet ( Hoja de datos )
| Número de pieza | EMB12N04A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
12mΩ
ID 30A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=20A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/8/16
EMB12N04A
LIMITS
±20
30
20
120
20
20
10
41
16
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3
75
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = 20A
8
6
VD S = 15V 20V
4
2
0
0
8 16
Q g ‐ Gate Charge( nC )
24
32
300
Maximum Safe Operating Area
100 R d s (o n ) Limit
10μ s
100μ s
10
1ms
D1C0100mmss
1
VG S = 10V
RSIθ N J C G= L3E C P°/UWLSE
Tc = 25 °C
0.5
0.5 1
10
VD S ,Drain‐Source Voltage( V )
50
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time ( msec )
1
2013/8/16
1600
1200
800
EMB12N04A
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
400
0
0
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 3° C/W
40 TC = 25° C
30
40
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time (sec)
100 1000
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J C =3°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
1000
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB12N04A.PDF ] | |
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