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Número de pieza | EMBA2N10A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBA2N10A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
125mΩ
ID 14A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/10/8
EMBA2N10A
LIMITS
±20
14
9.5
40
10
5
2.5
41
16
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.0
52.5
UNIT
°C / W
p.1
1 page Gate Charge Characteristics
10
I D = 8A
8
6
VD S = 50V 80V
4
2
0
0
10 20
Q g ‐ Gate Charge( nC )
30
M a x im u m S a fe O p e ra tin g A re a
100
R D S ( O N L) im it
100uS 10uS
10
1
1mS
D
1
C
1
00
0m
mS
S
0.1
V G S = 1 0 V
S in g le P u lse
R JC = 4 . 0 ° C / W
0.01
T C = 2 5 ° C
1 10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
40
1000
EMBA2N10A
2000
1800
1600
Ciss
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
1400
1200
1000
800
600
400 Coss
200
Crss
0
0 20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
3000 SRθi n J Cg =le 4 P.0u °Cls/eW
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=4.0°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/10/8
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMBA2N10A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBA2N10A | Field Effect Transistor | Excelliance MOS |
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