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What is EMBB5N15A?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMBB5N15A Datasheet PDF - Excelliance MOS

Part Number EMBB5N15A
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 6 Pages



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No Preview Available ! EMBB5N15A datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
150V 
D
RDSON (MAX.) 
250mΩ 
ID  5A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=2A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2012/4/20 
EMBB5N15A
LIMITS 
±20 
5 
3.5 
20 
2 
0.2 
0.1 
25 
10 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
5 
62.5 
UNIT 
°C / W 
p.1 

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EMBB5N15A equivalent
  EMBB5N15A
 
 
 
 
10
Gate Charge Characteristics
  I D  = 2.5A
 8
 
6
 
VD  S  = 50V 80V
 4
 
2
 
 
0
0
 
10 20 30
Q g  ‐ Gate Charge( nC )
40
2000
1800
1600
Capacitance Characteristics
f  =  1M Hz
V  G S  =  0  V
1400
1200
Ciss
1000
800
600
400
200 Coss
0 Crss
0 20 40 60 80
VD  S ‐ D rainSource V oltage( V  )
100
 
  100
M axim um  Safe O perating Area
 
10
  R  D S  (O  N  )Limit
 1
 
  0.1
10uS
100uS
1mS
10mS
DC100mS
  VG  S = 10V
Single Pulse
R   JA =  6 2 .5 °C / W
TA   = 25°C
  0.010.1 1 10 100
VD  S  ‐  D r a in S o u r c e  V o lta g e ( V  )
 
1000
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 62.5°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
 
 1
  Duty Cycle = 0.5
Transient Thermal Response Curve
  0.2
0.1
  0.1
0.05
  0.02
0.01
  0.01
Single Pulse
 
  0.001
  10 4
 
10 3
10 2
10 1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A = 62.5°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
 
 
 
2012/4/20 
p.5 


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Part Details

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Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMBB5N15AThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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