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What is EMB15C04A?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB15C04A Datasheet PDF - Excelliance MOS

Part Number EMB15C04A
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 8 Pages



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No Preview Available ! EMB15C04A datasheet, circuit

 
 
N & PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary:   
 
BVDSS 
RDSON (MAX.) 
NCH 
40V 
15mΩ 
PCH 
40V 
30mΩ 
D1
G1
D2
G2
ID 
9A  ‐7A 
S1 S2
 
 
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
VGS 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 70 °C 
Power Dissipation 
TC = 25 °C 
TC = 70 °C 
Operating Junction & Storage Temperature Range 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
2012/10/25 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
 
 
EMB15C04A
LIMITS 
NCH 
PCH 
±20  ±20 
9  ‐7 
7  ‐5.5 
36  ‐28 
21 
13 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
6 
42 
UNIT 
°C / W 
p.1 

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EMB15C04A equivalent
 
NChannel 
 
 
  35
OnRegion Characteristics
  VG  S = 10V
28
  8.0V
7.0V
  21
  14
 
 7
 0
0
0.5 1.0
1.5 2.0 2.5
  VD S  ‐ DrainSource Voltage( V )
 
  OnResistance Variation with Temperature
1.9
  I D  = 9A
VG  S   = 10V
  1.6
  1.3
 
1.0
 
  0.7
  0.4
50 25
0 25
50 75 100 125 150
  T J  ‐ Junction Temperature (°C)
 
  Transfer Characteristics
30
  VD  S = 10V
  25
  20
T A  = ‐55°C
  15
25°C
 
10
 
5
 
125°C
 
0
3
 
4 56
VG  S ‐ GateSource Voltage( V )
7
 
 
 
2012/10/25 
  EMB15C04A
OnResistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4 VG  S  = 7.0 V
1.2
1.0
8.0 V
10 V
0.8
0
7 14 21
I D  ‐ Drain Current( A )
28
35
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
OnResistance Variation with GateSource Voltage
I D  = 4.5 A
TA   = 125°C
TA   = 25°C
46
8
VG  S ‐ GateSource Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
10 VG  S  = 0V
1
0.1 TA   = 125°C 25°C
0.01
55°C
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2
VS  D ‐ Body Diode Forward Voltage( V )
1.4
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB15C04A electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMB15C04AThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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