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Teilenummer | EMBA5C10A |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
Logo | ||
Gesamt 8 Seiten N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
RDSON (MAX.)
ID
N‐CH
100V
150mΩ
3A
P‐CH
‐100V
250mΩ
‐2.5A
D1
G1
S1
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
D2
G2
S2
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/10/8
ID
IDM
PD
Tj, Tstg
TYPICAL
EMBA5C10A
LIMITS
N‐CH
P‐CH
±20 ±20
3 ‐2.5
2.1 ‐1.8
12 ‐10
10
4
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
12
62.5
UNIT
°C / W
p.1
10
Gate Charge Characteristics
I D = 2A
8
6
VD S = 50V 80V
4
2
0
0
8 16
Q g ‐ Gate Charge( nC )
24
32
100
Maximum Safe Operating Area
10
R D S ( O N )Limit
1
0.1
1001u0SuS
1mS
10mS
DC100mS
VG S = 10V
Single Pulse
R JA = 62.5°C/W
TA = 25°C
0.01
0.1 1 10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Transient Thermal Response Curve
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2013/10/8
EMBA5C10A
1500
1350
1200
1050
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
Ciss
900
750
600
450
300 Coss
150
0 Crss
0
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 62.5°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =62.5°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ EMBA5C10A Schematic.PDF ] |
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