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Teilenummer | EMB32C03G |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
Logo | ||
Gesamt 8 Seiten N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
30V ‐30V
32mΩ 40mΩ
ID
6.5A
‐6A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/10/25
ID
IDM
PD
Tj, Tstg
TYPICAL
EMB32C03G
LIMITS
N‐CH
P‐CH
±20 ±20
6.5 ‐6
5.5 ‐5
26 ‐24
2
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
10
Gate Charge Characteristics
I D = 6.5A
8
6
VD S = 5V
10V
15V
4
2
0
0
36
Q g ‐ Gate Charge( nC )
9
12
100
Maximum Safe Operating Area
10 R D S (O N ) Limit
1
0.1
VG S = 10V
Single Pulse
R J A = 125°C/W
T A = 25°C
100μs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2012/10/25
EMB32C03G
500
450
400
350
300
250
200
150
100
50
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20
VD S ‐ Drain‐Source Voltage( V )
25
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ EMB32C03G Schematic.PDF ] |
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